moc8101, moc8102, moc 8103, moc8104, moc8105 www.vishay.com vishay semiconductors rev. 1.6, 13-sep-11 1 document number: 83660 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 optocoupler, phototransistor output, no base connection description the moc8101, moc8102, moc8103, moc8104, moc8105 family optocoupler consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in dip-6 package. the coupling device is suitab le for signal transmission between two electrically sepa rated circuits. the potential difference between the circuits to be coupled should not exceed the maximum permissi ble reference voltages. the base terminal of the moc8101, moc8102, moc8103, moc8104, moc8105 is not connected, resulting in a substantially improved co mmon mode interference immunity. features ? isolation test voltage, 5300 v rms ? no base terminal connection for improved common mode interface immunity ? long term stability ? industry standard dual in line package ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec agency approvals ? ul1577, file no. e52744 syst em code h or j, double protection ? csa 93751 ? bsi iec 60950; iec 60065 ? din en 60747-5-5 (vde 0884) available with option 1 note ? additional options may be possibl e, please contact sales office. 1 2 3 6 5 4 b c e a c nc i179009-1 ordering information moc 8 1 0 # - # x 0 # # t part number ctr bin package option tape and reel agency certified/package ctr (%) 10 ma ul, csa, bsi 50 to 80 73 to 117 108 to 173 160 to 256 65 to 133 dip-6 moc8101 moc8102 moc8103 moc8104 moc8105 dip-6, 400 mil, option 6 - moc8102-x006 - - - smd-6, option 9 moc8101-x009 moc8102-x009 - - - vde, ul, csa, bsi 50 to 80 73 to 117 108 to 173 160 to 256 65 to 133 dip-6 MOC8101-X001 - moc8103-x001 - - dip-6, 400 mil - moc8102-x016 - moc8104-x016 - smd-6, option 7 moc8101-x017t moc8102-x017t - - - smd-6, option 9 - - - moc8104-x019t - > 0.1 mm 10.16 mm > 0.7 mm 7.62 mm dip-# option 7 option 6 option 9
moc8101, moc8102, moc 8103, moc8104, moc8105 www.vishay.com vishay semiconductors rev. 1.6, 13-sep-11 2 document number: 83660 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? stresses in excess of the abso lute maximum ratings can cause permanent damage to the device. functional operation of the devic e is not implied at these or any other conditions in excess of those give n in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. (1) refer to reflow profile for soldering conditions for surface mount ed devices (smd). refer to wave profile for soldering conditi ons for through hole devices (dip). (2) applies to wide bending option 6. note ? minimum and maximum values are testing requirements. typical valu es are characteristics of the device and are the result of en gineering evaluation. typical values are for information only and are not part of the testing requirements. absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit input reverse voltage v r 6.0 v forward continuous current i f 60 ma surge forward current t ? 10 s i fsm 2.5 a power dissipation p diss 100 mw derate linearly from 25c 1.33 mw/c output collector emitter breakdown voltage bv ceo 30 v emitter collector breakdown voltage bv eco 7.0 v collector current i c 50 ma derate linearly from 25c 2.0 mw/c power dissipation p diss 150 mw coupler isolation test voltage v iso 5300 v rms creepage distance ? 7.0 mm 8.0 (2) mm clearance distance ? 7.0 mm 8.0 (2) mm isolation thickness between emitter and detector ? 0.4 mm comparative tracking index per din iec 112/vde 0303, part 1 cti 175 isolation resistance v io = 500 v r io 10 12 ? derate linearly from 25 c 3.33 mw/c total power dissipation p tot 250 mw storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c junction temperature t j 100 c soldering temperature (1) max. 10 s, dip soldering: distance to seating plane ? 1.5 mm t sld 260 c electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit input forward voltage i f = 10 ma v f 1.25 1.5 v breakdown voltage i r = 10 a v br 6.0 v reverse current v r = 6.0 v i r 0.01 10 a capacitance v r = 0 v, f = 1.0 mhz c o 25 pf thermal resistance r thja 750 k/w output collector emitter capacitance v ce = 5.0 v, f = 1.0 mhz c ce 5.2 pf collector emitter dark current v ce = 10 v, t amp = 25 c moc8101 i ceo1 1.0 50 na v ce = 10 v, t amp = 100 c moc8102 i ceo1 1.0 a collector emitter breakdown voltage i c = 1.0 ma bv ceo 30 v emitter collector breakdown voltage i e = 100 ? abv eco 7.0 v thermal resistance r thja 500 k/w coupler saturation voltage collector emitter i f = 5.0 ma v cesat 0.25 0.4 v coupling capacitance c c 0.6 pf
moc8101, moc8102, moc 8103, moc8104, moc8105 www.vishay.com vishay semiconductors rev. 1.6, 13-sep-11 3 document number: 83660 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - forward voltage vs. forward current fig. 2 - collector current vs. led forward current fig. 3 - collector current vs. collector em itter voltage fig. 4 - collector current vs. ambient temperature current transfer ratio (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit current transfer ratio v ce = 10 v, i f = 10 ma moc8101 ctr 50 80 % moc8102 ctr 73 117 % moc8103 ctr 108 173 % moc8104 ctr 160 256 % moc8105 ctr 65 133 % switching characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbo l min. typ. max. unit turn-on time v cc = 10 v, i c = 2.0 ma, r l = 100 ? t on 3.0 s turn-off time v cc = 10 v, i c = 2.0 ma, r l = 100 ? t off 2.3 s rise time v cc = 10 v, i c = 2.0 ma, r l = 100 ? t r 2.0 s fall time v cc = 10 v, i c = 2.0 ma, r l = 100 ? t f 2.0 s cut off frequency f co 250 khz imoc8101_02 1.7 1.5 1.3 1.1 0.9 0.7 i f (ma) v f (v) 0.1 1 10 100 t a = 55 c t a = 25 c t a = 100 c imoc8101_03 10 1 0.1 0.01 i c (normalized) 0.1 1 10 100 i f (ma) normalized to i f = 10 ma imoc8101_04 moc8104 moc8103 moc8102 moc8101 moc8105 i f = 10 ma 25 20 15 10 5 0 i c (ma) 0 12345 678910 v ce (v) imoc8101_05 t a (c) i c (ma) 10 1 0.1 - 60 - 40 - 20 0 20 40 60 80 100 120 normalized to t a = 25 c i f = 10 ma v ce = 10 v
moc8101, moc8102, moc 8103, moc8104, moc8105 www.vishay.com vishay semiconductors rev. 1.6, 13-sep-11 4 document number: 83660 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - collector emi tter dark current vs. ambient temperature fig. 6 - capacitance vs. voltage fig. 7 - switching time test circuit and waveforms imoc8101_06 10 000 1000 100 10 1 0.1 0 20 40 60 80 100 t a (c) i ceo (normalized) normalized to v ce = 10 v v ce = 30 v v ce = 10 v imoc8101_07 20 18 16 14 12 10 8 6 4 2 0 0.01 0.1 1 10 100 c - capacitance (pf) f= 1 mhz c led c ce voltage (v) imoc81010_01 v cc = 10 v i c i f r l = 100 output input 10 % 90 % input pulse output pulse t on t of f t r t f test circuit waveforms
moc8101, moc8102, moc 8103, moc8104, moc8105 www.vishay.com vishay semiconductors rev. 1.6, 13-sep-11 5 document number: 83660 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters i178004 0.25 typ. 2.95 0.5 3.555 0.255 0.8 min. 7.62 typ. 0.85 0.05 2.54 typ. 1 min. 0.5 0.05 6.4 0.1 8.6 0.1 pin one id 6 5 4 1 2 3 18 3 to 9 7.62 to 8.81 4 typ. iso method a 1.2 0.1 8 min. 0.51 1.02 7.62 ref. 9.53 10.03 0.25 typ. 0.102 0.249 15 max. option 9 0.35 0.25 10.16 10.92 7.8 7.4 10.36 9.96 option 6 8 min. 7.62 typ. 4.6 4.1 8.4 min. 10.3 max. 0.7 option 7 18450
vishay dip-6a document number 83263 rev. 1.1, 10-dec-03 vishay semiconductors www.vishay.com 1 dip-6a package dimensions in inches (mm) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3C9 .300C.347 (7.62C8.81) 4 typ. iso method a
www.vishay.com 2 document number 83263 rev. 1.1, 10-dec-03 vishay dip-6a vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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